Invited speakers

Preliminary title: “InGaAs FinFET for Next Generation CMOS Application”
Prof. Edward Yi Chang
National Chiao Tung University
Prof. Edward Yi Chang
Preliminary title: “Current Understanding of Basestation Linearity on GaN Power amplifiers and the influence of starting material”
Dr. Jose L Jimenez
Infrastructure and Defense Products. Qorvo Inc.
Dr. José L. Jiménez
Preliminary title: “GaN based gas sensing”
Dr. Peter Offermans
Imec
Dr. Peter Offermans
Preliminary title: “THz devices using graphene”
Prof. Michael Shur
Rensselaer Polytechnic Institute
Prof. Michael Shur
Preliminary title: “Non-Reciprocal, Parametric Amplification of Electromagnetic Waves for Future Generation of RF Front-Ends”
Dr. Yuanxun Ethan Wang
Electrical Engineering Department, UCLA
Yuanxun Ethan Wang
Preliminary title: “Diamond Electronic Device Technology”
Prof. Timothy Grotjohn
Electrical and Computer Engineering, Michigan State University & R&D Director, Fraunhofer Center for Coatings and Diamond Technologies
Prof. Timothy Grotjohn
Preliminary title: “Vertical transport in Metal/Graphene/AlGaN/GaN structure”
Dr. Pil Sung Park
Navitas Semiconductor, Inc.
Dr. Pil Sung Park
Preliminary title: “Physically-Based compact modeling of AlGaN/GaN HEMTs”
Prof. Benjamin Iñiguez
Universitat Rovira i Virgili
Prof. Benjamin Iñiguez